? semiconductor components industries, llc, 2012 january, 2012 ? rev. 13 1 publication order number: mmbz5v6alt1/d mmbzxxxalt1g series, szmmbzxxxalt1g series 24 and 40 watt peak power zener transient voltage suppressors sot ? 23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations wh ere board space is at a premium. features ? sot ? 23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? working peak reverse voltage range ? 3 v to 26 v ? standard zener breakdown voltage range ? 5.6 v to 33 v ? peak power ? 24 or 40 w @ 1.0 ms (unidirectional), per figure 6 waveform ? esd rating: ? class 3b (> 16 kv) per the human body model ? class c (> 400 v) per the machine model ? maximum clamping voltage @ peak pulse current ? low leakage < 5.0 a ? flammability rating ul 94 v ? 0 ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? pb ? free packages are available* mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 ? c for 10 seconds package designed for optimal automated board assembly small package size for high density applications available in 8 mm tape and reel use the device number to order the 7 inch/3,000 unit reel. replace the ?t1? with ?t3? in the device number to order the 13 inch/10,000 unit reel. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 23 case 318 style 12 cathode 1 3 anode cathode 2 marking diagram see specific marking information in the device marking column of the table on page 3 of this data sheet. device marking information http://onsemi.com see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information 1 xxxm xxx = specific device code m = date code = pb ? free package (note: microdot may be in either location) free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1) mmbz5v6alt1g thru mmbz9v1alt1g @ t l ? 25 ? c mmbz12valt1g thru mmbz33valt1g p pk 24 40 w total power dissipation on fr ? 5 board (note 2) @ t a = 25 ? c derate above 25 ? c ? p d ? 225 1.8 mw ? mw/ ? c thermal resistance junction ? to ? ambient r ja 556 ? c/w total power dissipation on alumina substrate (note 3) @ t a = 25 ? c derate above 25 ? c ? p d ? 300 2.4 ? mw mw/ ? c thermal resistance junction ? to ? ambient r ja 417 ? c/w junction and storage temperature range t j , t stg ? 55 to +150 ? c lead solder temperature ? maximum (10 second duration) t l 260 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. non ? repetitive current pulse per figure 6 and derate above t a = 25 ? c per figure 7. 2. fr ? 5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *other voltages may be available upon request. ordering information device package shipping ? mmbz5v6alt1g sot ? 23 (pb ? free) 3,000 / tape & reel szmmbz5v6alt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbz5v6alt3g sot ? 23 (pb ? free) 10,000 / tape & reel mmbz6vxalt1g sot ? 23 (pb ? free) 3,000 / tape & reel szmmbz6vxalt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbz6vxalt3g sot ? 23 (pb ? free) 10,000 / tape & reel mmbz9v1alt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbz9v1alt13g sot ? 23 (pb ? free) 10,000 / tape & reel mmbzxxvalt1g sot ? 23 (pb ? free) 3,000 / tape & reel szmmbzxxvalt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbzxxvalt3g sot ? 23 (pb ? free) 10,000 / tape & reel szmmbzxxvalt3g sot ? 23 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 3 electrical characteristics (t a = 25 ? c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk uni ? directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 ? c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) 24 watts device* device marking v rwm i r @ v rwm breakdown voltage max zener impedance (note 5) v c @ i pp (note 6) v br v br (note 4) (v) @ i t z zt @ i zt z zk @ i zk v c i pp volts a min nom max ma ma v a mv/ c mmbz5v6alt1g/t3g 5a6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 mmbz6v2alt1g 6a2 3.0 0.5 5.89 6.2 6.51 1.0 ? ? ? 8.7 2.76 2.80 mmbz6v8alt1g 6a8 4.5 0.5 6.46 6.8 7.14 1.0 ? ? ? 9.6 2.5 3.4 mmbz9v1alt1g 9a1 6.0 0.3 8.65 9.1 9.56 1.0 ? ? ? 14 1.7 7.5 (v f = 0.9 v max @ i f = 10 ma) 40 watts device* device marking v rwm i r @ v rwm breakdown voltage v c @ i pp (note 6) v br v br (note 4) (v) @ i t v c i pp volts na min nom max ma v a mv/ c mmbz12valt1g 12a 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 mmbz15valt1g 15a 12 50 14.25 15 15.75 1.0 21 1.9 12.3 mmbz18valt1g 18a 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 mmbz20valt1g 20a 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VALT1G/t3g 27a 22 50 25.65 27 28.35 1.0 40 1.0 24.3 mmbz33valt1g 33a 26 50 31.35 33 34.65 1.0 46 0.87 30.4 4. v br measured at pulse test current i t at an ambient temperature of 25 ? c. 5. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) , with the ac frequency = 1.0 khz. 6. surge current waveform per figure 6 and derate per figure 7 * include sz-prefix devices where applicable. free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 4 typical characteristics ? 40 + 50 18 figure 1. typical breakdown voltage versus temperature (upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 0 temperature ( ? c) + 100 + 150 15 12 9 6 3 0 ? 40 + 25 1000 figure 2. typical leakage current versus temperature temperature ( ? c) + 85 + 125 100 10 1 0.1 0.01 breakdown voltage (volts) (v br @ i t ) i r (na) figure 3. typical capacitance versus bias voltage (upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. typical capacitance versus bias voltage (upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) temperature ( ? c) fr ? 5 board alumina substrate 01 2 3 320 280 240 160 120 40 0 c, capacitance (pf) bias (v) 200 80 15 v 5.6 v p d , power dissipation (mw) figure 5. steady state power derating curve 01 2 3 60 40 30 10 0 c, capacitance (pf) bias (v) 50 20 33 v 27 v free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 5 typical characteristics 0.1 1 10 100 1000 1 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 ? c bidirectional figure 6. pulse waveform value (%) 100 50 0 01 2 34 t, time (ms) figure 7. pulse derating curve pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value ? i pp 2 t p t r ? 10 s peak value ? i pp 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( ? c) figure 8. maximum non ? repetitive surge power, p pk versus pw figure 9. maximum non ? repetitive surge power, p pk (nom) versus pw 0.1 1 10 100 1000 1 10 100 pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 ? c bidirectional power is defined as v z (nom) x i z (pk) where v z (nom) is the nominal zener voltage measured at the low test current used for voltage classification. peak pulse derating in % of peak power or current @ t a = 25 ? c p pk , peak surge power (w) p pk , peak surge power (w) free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 6 typical common anode applications a quad junction common anode design in a sot ? 23 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. two simplified examples of tvs applications are illustrated below. mmbz5v6alt1g thru mmbz33valt1g keyboard terminal printer etc. functional decoder i/o a mmbz5v6alt1g thru mmbz33valt1g gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmbz5v6alt1g thru mmbz33valt1g free datasheet http:///
mmbzxxxalt1g series, szmmbzxxxalt1g series http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint style 12: pin 1. cathode 2. cathode 3. anode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 ? ? ? ? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbz5v6alt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative free datasheet http:///
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